sot-553 outline dimensions unit:mm 1 2 3 d j c a k 5 4 b g s dim a b c d g j k s min 1.50 1.10 0.50 0.17 0.08 0.10 1.50 0.50 ref max 1.70 1.30 0.60 0.27 0.16 0.30 1.70 so t -553 quad array for esd protection h t t p : / / w w w . w e i t r o n . c o m . t w w e i t r o n esda6v8v5 series 1/3 09-oct-07 l e a d( p b) - f r ee p b peak pulse power 100 watts reverse workingvoltage 6.8volts so t -553 mechanical characteristics: features: 3 4 5 2 1 this quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. it is intended for use in voltage and esd sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. its quad junction common anode design protects four separate lines using only one package. these devices are ideal for situations where board space is at apremium. * low leakage < 1a @ 3 volt * breakdown voltage: 6.8 volt @ 1 ma * esd protection meeting iec61000-4-2 - level 4 * void free, transfer-molded, thermosetting plastic case * corrosion resistant finish, easily solderable * package designed for optimal automated board assembly * small package size for high density applications
h t t p : / / w w w . w e i t r o n . c o m . t w w e i t r o n 2/3 09-oct-07 esda6v8v5 series electrical characteristics (ta = 25c unless otherwise noted) symbol parameter i p p m a x i m u m r e v e r s e p e a k p u l s e cu r r e n t v c clam p i n g v o l t a g e @ i p p v r w m w o r k i n g p e a k r e v e r se v o l t a g e i r m a x i m u m r e v e r s e l e a k a g e cu r r e n t @ v r w m v b r b r e a k d o w n v o l t a g e @ i t i t t e st cu r r e n t v b r m a x i m u m t em p e r a t u r e c o e f f i c i e n t o f v b r i f f or w a r d cu r r e n t v f f or w a r d v o l t a g e @ i f z zt m a x i m u m z e n e r i mped a n c e @ i zt i zk r e v e r s e cu r r e n t z zk m a x i m u m z e n e r i mped a n c e @ i zk uni-directional i p p i f v i i r i t v r w m v c v b r v f maximum r a tings (t a = 2 5 c u n l e ss o t h e r w i s e n o t e d ) characteristic symbol v alue unit p e a k p o w e r d i s s i p a t i o n ( 8 x 2 0 s @ t a = 2 5 c ) ( n o t e 1 ) p p k 100 w steady state power - 1 diode (note 2) p d 300 mw t he r m a l r e s i st a n c e j u n c t i o n t o a m b i e n t a b o v e 2 5 c , d e r a te r j a 370 2.7 c/w mw/ c m a x i m u m j u n c t i o n t em p e r a t u r e t j m a x 150 c o p e r a t i n g j u n ct i o n a n d s t o r a g e t em p e r a t u r e r a n g e t j t s t g -55 to +150 c esd discharg e mil std 883c - method 3015-6 iec1000-4-2, air discharge iec1000-4-2, contact discharge v p p 16 16 9 kv l e a d s o l d e r t em p e r a t u r e ( 1 0 s e c o n d s d u r a t i o n ) t l 260 c electrica l characteristics (t a = 2 5 c) b r e a k down v ol t a ge v b r @ 1 m a ( v ol t s ) l e a k a g e c u r r e n t i r m @ v r m v c m a x @ i p p t y p c a p a c i t a n c e @ 0 v b i a s ( n o t e 3 ) max v f @ i f = 2 0 0 m a device min nom max v r w m i r w m ( a) v c ( v) i p p (a) (pf) (v) 1 . non-repetitive current per figure 1. 2 . o n l y 1 d i o d e u n d e r p o w e r . f o r a l l 4 di o d e s u n d e r p o w e r , p d will be 25%. mounted on fr-4 board with min pad. 3 . ca p a c i t a n c e o f o n e d i o d e a t f = 1 m h z , v r = 0 v , t a = 2 5 c 5.32 5.6 5.88 3.0 1.0 10.5 10 90 1.3 5.89 6.2 6.51 4.0 0.5 1 1.5 9.0 80 1.3 6.46 6.8 7.14 4.3 0.1 12.5 8.0 70 1.3 ESDA5V6V5 e s d a 6 v 2 v5 e s d a 6 v 8 v5 device marking item marking eqivalent circuit diagram 1 5 2 4 3 ve esda6v8v5 esda6v2v5 ESDA5V6V5
figure 1. pulse w aveform t, ti m e ( s) 30 15 10 5 0 pe r c e n t of i p p 25 20 90 80 70 60 50 40 30 20 10 0 100 1 10 w a veform p arameters t r = 8 s t d = 2 0 s t d = i p p /2 c-t t a , a m b ie n t te m pe r a t ur e ( c) 150 125 100 75 50 25 0 90 80 70 60 50 40 30 20 10 0 100 1 10 % of r a ted power or i p p figure 2. power derating curve figure 3. clamping v oltage versus peak pulse current i p p , pea k p u l se curr en t ( a) 12.5 1 1 1 6 4 2 0 10 v c , cl am pi n g vo l t a ge ( v) 8 14 12 figu r e 4 . t y pi c a l c a p a c i t a n c e v b r , breakdown vo l t age (v) 6.8 6.2 5.6 70 60 50 0 80 90 c , c a p a c i t a nc e ( p f) 100 30 20 10 40 7.1 6.5 5.9 5.3 13.5 3 5 7 9 10 http://www.weitron.com.tw weitron esda6v8v5 series 3/3 09-oct-07
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